The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits.
It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.
This highly reliable process coupled with innovative circuit design
IS64WV12816EFBLL Features
* High-speed access time: 8ns, 10ns, 12ns
* Single power supply
* 1.65V-2.2V VDD(IS61/64WV12816EFALL)
* 2.4V-3.6V VDD (IS61/64WV12816EFBLL)
* Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and corr
Datasheet Details
IS64WV12816EFBLL, IS64WV12816EFALL
ISSI
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128k x 16 high speed aynchronous cmos static ram.
This datasheet PDF includes multiple part numbers: IS64WV12816EFBLL, IS64WV12816EFALL.
Please refer to the document for exact specifications by model.
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