IS64WV12816EFALL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

ISSI

Description

IS61/64WV12816EFALL IS61/64WV12816EFBLL 128Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC APRIL 2022 KEY .
The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits.

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Datasheet Specifications

Part number: IS64WV12816EFALL
Manufacturer: ISSI
File Size: 607.03 KB
Datasheet: IS64WV12816EFALL-ISSI.pdf
Description: 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

Features

* High-speed access time: 8ns, 10ns, 12ns
* Single power supply
* 1.65V-2.2V VDD(IS61/64WV12816EFALL)
* 2.4V-3.6V VDD (IS61/64WV12816EFBLL)
* Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and corr

Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

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IS64WV12816EFALL 128K HIGH SPEED AYNCHRONOUS CMOS STATIC RAM ISSI

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