IS65WV12816ALL - ULTRA LOW POWER CMOS STATIC RAM

ISSI

IS65WV12816ALL Datasheet Preview — Preview of IS65WV12816ALL PDF

Datasheet Details

Part number	IS65WV12816ALL
Manufacturer	ISSI
File Size	125.43 KB
Description	ULTRA LOW POWER CMOS STATIC RAM
Datasheet	IS65WV12816ALL-ISSI.pdf

IS65WV12816ALL Product details

Description

The ISSI IS65WV12816ALL/ IS65WV12816BLL are high- speed, 2M bit static RAMs organized as 128K words by 16 bits.It is fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipatio

Features

High-speed access time: 55ns, 70ns.
CMOS low power operation: 36 mW (typical) operating 9 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL).
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
2CS Option Available.
Temperature Offerings: Option A: 0 to 70oC O.

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Other Datasheets by ISSI

IS65WV12816BLL - ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816DALL - ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816DBLL - ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816EALL - ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816EBLL - ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816FALL - ULTRA LOW POWER CMOS STATIC RAM

Published: Jun 9, 2016 |