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IS65WV12816EALL Datasheet - ISSI

ULTRA LOW POWER CMOS STATIC RAM

IS65WV12816EALL Features

* High-speed access time: 45ns, 55ns

* CMOS low power operation

* 36 mW (typical) operating

* 9 µW (typical) CMOS standby

* TTL compatible interface levels

* Single power supply

* 1.65V-2.2V VDD (IS62/65WV12816EALL)

* 2.2V-3.6V VDD (IS62/65WV12816EBLL)

IS65WV12816EALL General Description

The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption dev.

IS65WV12816EALL Datasheet (1.05 MB)

Preview of IS65WV12816EALL PDF

Datasheet Details

Part number:

IS65WV12816EALL

Manufacturer:

ISSI

File Size:

1.05 MB

Description:

Ultra low power cmos static ram.

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IS65WV12816EALL ULTRA LOW POWER CMOS STATIC RAM ISSI

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