Datasheet4U Logo Datasheet4U.com

IS65WV12816BLL Datasheet - ISSI

ULTRA LOW POWER CMOS STATIC RAM

IS65WV12816BLL Features

* High-speed access time: 55ns, 70ns

* CMOS low power operation: 36 mW (typical) operating 9 µW (typical) CMOS standby

* TTL compatible interface levels

* Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL)

* Fully static oper

IS65WV12816BLL General Description

The ISSI IS65WV12816ALL/ IS65WV12816BLL are high- speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consump.

IS65WV12816BLL Datasheet (125.43 KB)

Preview of IS65WV12816BLL PDF

Datasheet Details

Part number:

IS65WV12816BLL

Manufacturer:

ISSI

File Size:

125.43 KB

Description:

Ultra low power cmos static ram.

📁 Related Datasheet

IS65WV12816ALL ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS65WV12816DALL ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS65WV12816DBLL ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS65WV12816EALL ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS65WV12816EBLL ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS65WV12816FALL ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS65WV12816FBLL ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS65WV1288DALL ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS65WV1288DBLL ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS65WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)

TAGS

IS65WV12816BLL ULTRA LOW POWER CMOS STATIC RAM ISSI

Image Gallery

IS65WV12816BLL Datasheet Preview Page 2 IS65WV12816BLL Datasheet Preview Page 3

IS65WV12816BLL Distributor