IS66WVH16M8ALL Datasheet - ISSI

IS66WVH16M8ALL 16M x 8 HyperRAM

16M x 8 HyperRAM™ IS66WVH16M8ALL/BLL IS67WVH16M8ALL/BLL 6(37(0%(5 2018 Overview The IS66/67WVH16M8ALL/BLL are integrated memory device of 128Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 16M words by 8 bits. The device is a dual die stack of two 64Mb die. The device supports a HyperBus interface, Very Low Signal Count (Address, Command and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed specially for Mobil.

IS66WVH16M8ALL-ISSI.pdf