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IS66WV51216DALL

8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV51216DALL Features

* High-speed access time:

* 70ns (IS66WV51216DALL, IS66/67WV51216DBLL)

* 55ns (IS66/67WV51216DBLL)

* CMOS low power operation

* Single power supply

* Vdd = 1.7V-1.95V (IS66WV51216 ALL)

* Vdd = 2.5V-3.6V (IS66/67WV51216 BLL)

* Three stat

IS66WV51216DALL General Description

The ISSI IS66WV51216DALL and IS66/67WV51216DBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low powe.

IS66WV51216DALL Datasheet (458.73 KB)

Preview of IS66WV51216DALL PDF

Datasheet Details

Part number:

IS66WV51216DALL

Manufacturer:

Integrated Silicon Solution

File Size:

458.73 KB

Description:

8mb low voltage ultra low power pseudo cmos static ram.
hgihwol D wol D IS66WV51216DALL IS66/67WV51216DBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JUL.

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IS66WV51216DALL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM Integrated Silicon Solution

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