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IS66WV51216EBLL, IS66WV51216EALL Datasheet - ISSI

IS66WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM

The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power .

IS66WV51216EBLL Features

* High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL )

* CMOS Lower Power Operation

* Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL )

* Three State Outputs

* Data Control for Upper and Lower bytes

* L

IS66WV51216EBLL, IS66WV51216EALL Datasheet

This datasheet PDF includes multiple part numbers: IS66WV51216EBLL, IS66WV51216EALL. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IS66WV51216EBLL, IS66WV51216EALL

Manufacturer:

ISSI

File Size:

723.87 KB

Description:

Ultra low power pseudo cmos static ram.

This datasheet PDF includes multiple part numbers: IS66WV51216EBLL, IS66WV51216EALL. Please refer to the document for exact specifications by model.

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IS66WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM ISSI

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