Description
IS66WV1M16DALL IS66WV1M16DBLL 16Mb LOW VOLTAGE, PRELIMINARY INFORMATION MARCH 2011 ULTRA LOW POWER PSEUDO CMOS STATIC RAM F E A T U R ES D.
High-speed access time:.
70ns (IS66WV1M16DALL/DBLL).
55ns (IS66WV1M16DBLL).
CMOS low power operation.
Features
* ≤ 0.2V, Vin ≥ Vdd
* 0.2V, or Vin ≤ 0.2V, f = 0
Com. Ind. Auto. typ. (2)
100 130 150 75
µA
OR
ULB Control
Vdd = Max. , CS1 = Vil, CS2=Vih Vin ≥ Vdd
* 0.2V, or Vin
Applications
* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance
