IS66WV51216BLL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

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ISSI

Datasheet Details

Part number	IS66WV51216BLL
Manufacturer	ISSI
File Size	420.35 KB
Description	ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Datasheet	IS66WV51216BLL Datasheet
Note	This datasheet PDF includes multiple part numbers: IS66WV51216BLL, IS66WV51216ALL. Please refer to the document for exact specifications by model.
Additional preview pages of the IS66WV51216BLL datasheet.

Product details

Description

The ISSI IS66WV51216ALL/BLL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits.It is fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CS1 is HIGH (deselected) or when CS2 is low (deselected) or when CS1 is low, CS2 is high and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be re

Features

High-speed access time: 55ns.
CMOS low power operation.
mW (typical) operating.
µW (typical) CMOS standby.
Single power supply.
1.7V--1.95V Vdd (66WV51216ALL) (70ns).
2.5V--3.6V Vdd (66WV51216BLL) (55ns).
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available.
Lead-free available.

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Other Datasheets by ISSI

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Published: Jun 9, 2016 |