IS66WV51216DBLL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Product Overview

Integrated Silicon Solution

Datasheet Details

Part number	IS66WV51216DBLL
Manufacturer	Integrated Silicon Solution
File Size	458.73 KB
Description	8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Datasheet	IS66WV51216DBLL Datasheet
Note	This datasheet PDF includes multiple part numbers: IS66WV51216DBLL, IS66WV51216DALL. Please refer to the document for exact specifications by model.
Additional preview pages of the IS66WV51216DBLL datasheet.

Product details

Description

The ISSI IS66WV51216DALL and IS66/67WV51216DBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits.It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CS1 is HIGH (deselected) or when CS2 is (deselected) or when CS1 is , CS2 is and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipat

Features

High-speed access time:.
70ns (IS66WV51216DALL, IS66/67WV51216DBLL).
55ns (IS66/67WV51216DBLL).
CMOS low power operation.
Single power supply.
Vdd = 1.7V-1.95V (IS66WV51216 ALL).
Vdd = 2.5V-3.6V (IS66/67WV51216 BLL).
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available.
Lead-free available.

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Published: Jun 1, 2014 |