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IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV1M16DALL Description

IS66WV1M16DALL IS66WV1M16DBLL 16Mb LOW VOLTAGE, PRELIMINARY INFORMATION MARCH 2011 ULTRA LOW POWER PSEUDO CMOS STATIC RAM F E A T U R ES D.
High-speed access time:. 70ns (IS66WV1M16DALL/DBLL). 55ns (IS66WV1M16DBLL). CMOS low power operation.

IS66WV1M16DALL Features

* ≤ 0.2V, Vin ≥ Vdd
* 0.2V, or Vin ≤ 0.2V, f = 0 Com. Ind. Auto. typ. (2) 100 130 150 75 µA OR ULB Control Vdd = Max. , CS1 = Vil, CS2=Vih Vin ≥ Vdd
* 0.2V, or Vin

IS66WV1M16DALL Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

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Datasheet Details

Part number
IS66WV1M16DALL
Manufacturer
ISSI
File Size
363.22 KB
Datasheet
IS66WV1M16DALL-ISSI.pdf
Description
ULTRA LOW POWER PSEUDO CMOS STATIC RAM

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ULTRA LOW POWER PSEUDO CMOS STATIC RAM ISSI
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