IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM

ISSI

Description

IS66WV1M16DALL IS66WV1M16DBLL 16Mb LOW VOLTAGE, PRELIMINARY INFORMATION MARCH 2011 ULTRA LOW POWER PSEUDO CMOS STATIC RAM F E A T U R ES D.
High-speed access time:. 70ns (IS66WV1M16DALL/DBLL). 55ns (IS66WV1M16DBLL). CMOS low power operation.

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Datasheet Specifications

Part number: IS66WV1M16DALL
Manufacturer: ISSI
File Size: 363.22 KB
Datasheet: IS66WV1M16DALL-ISSI.pdf
Description: ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Features

* ≤ 0.2V, Vin ≥ Vdd
* 0.2V, or Vin ≤ 0.2V, f = 0 Com. Ind. Auto. typ. (2) 100 130 150 75 µA OR ULB Control Vdd = Max. , CS1 = Vil, CS2=Vih Vin ≥ Vdd
* 0.2V, or Vin

Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

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IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM ISSI

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