IS61C1024

The IS61C1024 is 128K x 8 HIGH-SPEED CMOS STATIC RAM designed by Integrated Silicon Solution.

Product Overview

Integrated Silicon Solution

Datasheet Details

Part number	IS61C1024
Manufacturer	Integrated Silicon Solution
File Size	79.58 KB
Description	128K x 8 HIGH-SPEED CMOS STATIC RAM
Datasheet	IS61C1024-IntegratedSiliconSolution.pdf
Additional preview pages of the IS61C1024 datasheet.

Product details

Description

The ISSI IS61C1024 and IS61C1024L are very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs.They are fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.Easy memory expansion is provided

Features

High-speed access time: 12, 15, 20, 25 ns.
Low active power: 600 mW (typical).
Low standby power: 500 µW (typical) CMOS standby.
Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in.

📁 Similar Datasheet

IS61C1024AL - 128K x 8 HIGH-SPEED CMOS STATIC RAM (ISSI)
IS61C3216 - 32K x 16 HIGH-SPEED CMOS STATIC RAM (ISSI)
IS61C5128AL - 512K x 8 HIGH-SPEED CMOS STATIC RAM (ISSI)
IS61C5128AS - 512K x 8 HIGH-SPEED CMOS STATIC RAM (ISSI)
IS61C64AH - 8K x 8 HIGH-SPEED CMOS STATIC RAM (Integrated Circuit Solution)
IS61DDB22M36C - 72Mb DDR-II CIO SYNCHRONOUS SRAM (ISSI)
IS61DDB24M18C - 72Mb DDR-II CIO SYNCHRONOUS SRAM (ISSI)
IS61DDP2B21M36C - 36Mb DDR-IIP CIO SYNCHRONOUS SRAM (ISSI)

Other Datasheets by Integrated Silicon Solution

IS61C1024L - 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C256 - 32K x 8 Low Voltage CMOS STATIC RAM
IS61C25616 - 256K x 8 High Speed CMOS STATIC RAM
IS61C25616AL - 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C25616AS - 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C256AH - 32K x 8 HIGH-SPEED CMOS STATIC RAM

Published: Jul 25, 2016 |