25N120 Datasheet - IXYS Corporation

25N120 IXGH25N120

www.DataSheet4U.com VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25 °C Maximum Ratings 1200 1200 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 +150.

25N120 Features

* International standard package JEDEC TO-247 AD 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C TJ = 1

25N120 Datasheet (53.99 KB)