* Trench Power MOSFETS
* 175 °C Junction Temperature
* Low Thermal Resistance Package Available RoHS
* COMPLIANT D TO-252 GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-
25N10G-TN3-R Datasheet (192.24 KB)
25N10G-TN3-R
VBsemi
192.24 KB
N-channel 100v mosfet.
25N10G-TN3-R-VB 25N10G-TN3-R-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS .
📁 Related Datasheet
25N10 N-Channel MOSFET (ROUM)
25N10 N-Channel MOSFET (Unisonic Technologies)
25N10 N-Channel MOSFET (INCHANGE)
25N102K Metal Oxide Varistor (HUAAN)
25N112K Metal Oxide Varistor (HUAAN)
25N120 IXGH25N120 (IXYS Corporation)
25N122K Metal Oxide Varistor (HUAAN)
25N151K Metal Oxide Varistor (HUAAN)
25N18 N-Channel MOSFET (Inchange Semiconductor)
25N181K Metal Oxide Varistor (HUAAN)
