DE375-102N10A - RF Power MOSFET
DE375-102N10A Features
* TJ = 25°C unless otherwise specified SG1 SG2 GATE = = = = 1000 V 10 A 1.2 Ω 940 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2
