Datasheet Specifications
- Part number
- DE375-102N10A
- Manufacturer
- IXYS Corporation
- File Size
- 157.49 KB
- Datasheet
- DE375-102N10A_IXYSCorporation.pdf
- Description
- RF Power MOSFET
Description
DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/d.
Features
* TJ = 25°C unless otherwise specified SG1 SG2 GATE = = = = 1000 V 10 A 1.2 Ω 940 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2DE375-102N10A Distributors
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