DE375-102N10A - RF Power MOSFET

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IXYS Corporation

Part number	DE375-102N10A
Manufacturer	IXYS Corporation
File Size	157.49 KB
Description	RF Power MOSFET
Datasheet	DE375-102N10A Datasheet
Additional preview pages of the DE375-102N10A datasheet.

TJ = 25°C unless otherwise specified SG1 SG2 GATE = = = = 1000 V 10 A 1.2 Ω 940 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 RDS(on) PDC DRAIN SD1 SD2 max. V 5.5 ±100 V nA VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS.

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Published: Sep 28, 2005 |