DE375-501N21A Datasheet - IXYS Corporation

DE375-501N21A RF Power MOSFET

DE375-501N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 Maximum Ratings 500 500 ±20 ±30 25 150 21 30 5 >200 940 V V V V A A A mJ V/ns V/ns W W .

DE375-501N21A Features

* Test Conditions Characteristic Values TJ = 25°C unless otherwise specified min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm (0.063 in) from case for 10 s VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C VGS = 15 V, ID

DE375-501N21A Datasheet (172.11 KB)