DE375-102N12A Datasheet - IXYS

DE375-102N12A RF Power MOSFET

N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 DE375-102N12A RF Power MOSFET Maximum Ratings 1000 V 1000 V ±20 V ±30 V 12 A.

DE375-102N12A Features

* Isolated Substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power cycling capability

* IXYS advanced low Qg process

* Low gate charge and capacitances

* easier to drive

* faster switch

DE375-102N12A-IXYS.pdf

DE375-102N12A Datasheet Preview — Preview of DE375-102N12A PDF

Datasheet Details

Part number:

DE375-102N12A

Manufacturer:

IXYS

File Size:

153.42 KB

Description:

Rf power mosfet.

DE375-102N12A Distributor

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DE375-102N12A DE375-102N12A Power MOSFET IXYS