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DE375-102N12A - RF Power MOSFET

DE375-102N12A Description

* N-Channel Enhancement Mode * Low Qg and Rg * High dv/dt * Nanosecond Switching * 50MHz Maximum Frequency Sy.

DE375-102N12A Features

* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power cycling capability
* IXYS advanced low Qg process
* Low gate charge and capacitances
* easier to drive
* faster switch

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Datasheet Details

Part number
DE375-102N12A
Manufacturer
IXYS
File Size
153.42 KB
Datasheet
DE375-102N12A-IXYS.pdf
Description
RF Power MOSFET

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Power MOSFET IXYS
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