* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power cycling capability
* IXYS advanced low Qg process
* Low gate charge and capacitances
* easier to drive
* faster switch
DE375-102N12A Datasheet (153.42 KB)
DE375-102N12A
IXYS
153.42 KB
Rf power mosfet.
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Sy.
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