IXFA4N100Q Datasheet - IXYS Corporation

IXFA4N100Q Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by T.

IXFA4N100Q Features

* g g

* IXYS advanced low Qg process

* Low gate charge and capacitances - easier to drive - faster switching

* International standard packages

* Low RDS (on)

* Rated for unclamped Inductive load Switching (UIS)

* Molding epoxies meet UL 94 V-0 flammabili

IXFA4N100Q Datasheet (105.31 KB)

IXFA4N100Q Datasheet Preview — Preview of IXFA4N100Q PDF

Datasheet Details

Part number:

IXFA4N100Q

Manufacturer:

IXYS Corporation

File Size:

105.31 KB

Description:

Power mosfet.

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IXFA4N100Q Power MOSFET IXYS Corporation

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