Datasheet Details
- Part number
- IXFA130N10T
- Manufacturer
- INCHANGE
- File Size
- 250.92 KB
- Datasheet
- IXFA130N10T-INCHANGE.pdf
- Description
- N-Channel MOSFET
IXFA130N10T Description
isc N-Channel MOSFET Transistor IXFA130N10T *.IXFA130N10T Features
* Static drain-source on-resistance:
RDS(on) ≤ 9.1mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IXFA130N10T Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drai. -Source Voltage
100
VGS
Gate-Source Voltage
±30
ID
Drai. Curre. t-Co. ti. uous
130
IDM
Drai. Curre. t-Si. gle Pulsed
350
PD
Total Dissipatio. @TC=25℃
360
Tj
Operati. g Ju. ctio. Temperature
-55~175
Tstg
Storage T
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