IXFA6N120P, IXFP6N120P Datasheet (IXYS Corporation)

IXFA6N120P, IXFP6N120P, Power MOSFET

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA6N120P IXFP6N120P IXFH6N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 6 18 3 300 10 250 -55 +150 150

IXFA6N120P Features

* International Standard Packages

* Dynamic dv/dt Rating

* Avalanche Rated

* Fast Intrinsic Diode

* Low QG & RDS(on)

* Low Drain-to-Tab Capacitance

* Low Package Inductance Advantages

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Batt