IXFA7N80P, IXFP7N80P Datasheet - IXYS Corporation

IXFA7N80P - Power MOSFET

PolarTM HiPerFETTM Power MOSFET IXFA7N80P IXFP7N80P VDSS ID25 trr RDS(on) = 800V = 7A ≤ 1.44Ω ≤ 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C M

IXFA7N80P Features

* z z z z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG Advantages z Symbol Test Conditions (TJ = 25°C Unless Ot

IXFP7N80P_IXYSCorporation.pdf