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IXFV74N20PS - PolarHT HiPerFET Power MOSFET

This page provides the datasheet information for the IXFV74N20PS, a member of the IXFV74N20P PolarHT HiPerFET Power MOSFET family.

Features

  • Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.5 5.0 ±100 25 250 34 V V nA µA µA mΩ Advantages z z z z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Eas.

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Datasheet Details

Part number IXFV74N20PS
Manufacturer IXYS Corporation
File Size 717.78 KB
Description PolarHT HiPerFET Power MOSFET
Datasheet download datasheet IXFV74N20PS Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Preliminary Data Sheet IXFH 74N20P IXFV 74N20P IXFV 74N20PS VDSS ID25 trr RDS(on) = = = ≤ 200 74 34 200 V A mΩ ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 74 200 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V A A A mJ J V/ns TO-247 (IXFH) G D S D (TAB) PLUS220 (IXFV) G W °C °C °C °C °C D S D (TAB) PLUS220SMD (IXFV-PS) 1.6 mm (0.062 in.
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