• Part: IXFV74N20P
  • Description: PolarHT HiPerFET Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 717.78 KB
Download IXFV74N20P Datasheet PDF
IXYS
IXFV74N20P
IXFV74N20P is PolarHT HiPerFET Power MOSFET manufactured by IXYS.
Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.5 5.0 ±100 25 250 34 V V n A µA µA mΩ Advantages z z z z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99209(09/04) © 2004 IXYS All rights reserved IXFH 74N20P IXFV 74N20P IXFV 74N20PS .. Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 30 44 3300 VGS = 0 V, VDS = 25 V, f = 1 MHz 800 190 23 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 Ω (External) 21 60 21 107 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 24 52 S p F p F p F ns ns ns ns n C n C n C 0.31 K/W (TO-247, PLUS220) 0.21 K/W Terminals: 1 - Gate 2 - Drain 1 2 3 TO-247 (IXFH) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK VDS= 10 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM PLUS220SMD (IXFV-PS) Outline E E1 L2 A A1 E1 Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. 74 180 1.5 120 0.4 6 A A V Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25 A, -di/dt = 100 A/µs VR = 100 V PLUS220 (IXFV) Outline E E1 L2 A A1 E1 200 ns µC A L1 L D L3 D1 2X e 3X b...