Download the IXFV74N20PS datasheet PDF.
This datasheet also covers the IXFV74N20P variant, as both devices belong to the same polarht hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.5 5.0 ±100 25 250 34 V V nA µA µA mΩ Advantages
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
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Full PDF Text Transcription for IXFV74N20PS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFV74N20PS. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Preliminary Data Sheet IXFH 74N20P IXFV 74N20P IXFV 74...
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Avalanche Rated Preliminary Data Sheet IXFH 74N20P IXFV 74N20P IXFV 74N20PS VDSS ID25 trr RDS(on) = = = ≤ 200 74 34 200 V A mΩ ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 74 200 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V A A A mJ J V/ns TO-247 (IXFH) G D S D (TAB) PLUS220 (IXFV) G W °C °C °C °C °C D S D
IXFV74N20PS Datasheet
