* Low on-state voltage IGBT and anti-parallel diode in one package
* High current handling capability
* MOS Gate turn-on for drive simplicity Applications
* Lighting controls
* Heating controls
* AC/DC relays Symbol Test Conditions VGE(th) ICES IGES
IXGK50N60A2D1 Datasheet (116.31 KB)
IXGK50N60A2D1
IXYS Corporation
116.31 KB
Igbt.
Advance Technical Data IGBT with Diode IXGK 50N60A2D1 IXGX 50N60A2D1 V I CES VC25 CE(sat) = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol .
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