IXGK50N60A2D1 Datasheet - IXYS Corporation

IXGK50N60A2D1 IGBT

Advance Technical Data IGBT with Diode IXGK 50N60A2D1 IXGX 50N60A2D1 V I CES VC25 CE(sat) = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C (50N60B2D1 Diode) ICM TC = 25°C, 1 ms SSOA (RBSOA) PC TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Mounting.

IXGK50N60A2D1 Features

* Low on-state voltage IGBT and anti-parallel diode in one package

* High current handling capability

* MOS Gate turn-on for drive simplicity Applications

* Lighting controls

* Heating controls

* AC/DC relays Symbol Test Conditions VGE(th) ICES IGES

IXGK50N60A2D1-IXYSCorporation.pdf