IXGK50N60AU1 Datasheet - IXYS Corporation

IXGK50N60AU1 HiPerFAST IGBT

HiPerFASTTM IGBT with Diode www.datasheet4u.com IXGK 50N60AU1 Combi Pack VCES IC25 VCE(sat) tfi = = = = 600 V 75 A 2.7 V 275 ns Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C, limited by leads TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH TC = 25 °C Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.

IXGK50N60AU1 Features

* W °C °C °C l l l l Mounting torque (M4) 0.9/6 Nm/lb.in. 10 300 g °C l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-264 AA High frequency IGBT and antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat

IXGK50N60AU1_IXYSCorporation.pdf