IXGK50N60B2D1 Datasheet - IXYS

IXGK50N60B2D1 IGBT

Advance Technical Data HiPerFASTTM IGBT with Diode IXGK 50N60B2D1 IXGX 50N60B2D1 B2-Class High Speed IGBTs V CES IC25 VCE(sat) t fi(typ) = 600 V = 75 A = 2.0 V = 65 ns Symbol Test Conditions VCES V CGR VGES VGEM TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C (50N60B2D1 Diode) ICM TC = 25°C, 1 ms SSOA (RBSOA) P C TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped .

IXGK50N60B2D1 Features

* High frequency IGBT and anti-parallel FRED in one package

* High current handling capability

* MOS Gate turn-on for drive simplicity

* Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications

* Switch-mode and resonant-mode power supp

IXGK50N60B2D1-IXYS.pdf