VMO580-02F - N-Channel MOSFET

IXYS Corporation

Datasheet Details

HiPerFETTM technology - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode.
package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy drive - isolated ceramic base plate Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 3.2 2 3 1 2750 500 1350 210 500 900 350 0.9 300 0.07 1.1 3.8 mΩ 4.

📁 VMO580-02F Similar Datasheet

Other Datasheets by IXYS Corporation

Published: Apr 16, 2005 |