* PolarHT™ MOSFET technology - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode
* package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals
VMO1200-01F Datasheet (509.40 KB)
VMO1200-01F
IXYS
509.40 KB
N-channel enhancement mode mosfet.
PolarHT™ Module N-Channel Enhancement Mode D G KS S VMO 1200-01F VDSS = 100 V ID25 = 1220 A RDS(on) = 1.25 mΩ max. KS G SD MOSFET Symbol VDSS VGS.
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