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VMO1200-01F Datasheet - IXYS

VMO1200-01F - N-Channel Enhancement Mode MOSFET

PolarHT™ Module N-Channel Enhancement Mode D G KS S VMO 1200-01F VDSS = 100 V ID25 = 1220 A RDS(on) = 1.25 mΩ max.

KS G SD MOSFET Symbol VDSS VGS ID25 ID80 IF25 IF80 Conditions TVJ = 25°C to 150°C TC = 25°C TC = 80°C TC = 25°C (diode) TC = 80°C (diode) Maximum Ratings 100 V ± 20 V 1220 A 970 A 1220 A 970 A Symbol RDSon VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erec td(on) tr td(off) tf Eon Eoff Erec RthJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless

VMO1200-01F Features

* PolarHT™ MOSFET technology - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode

* package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals

VMO1200-01F-IXYS.pdf

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Datasheet Details

Part number:

VMO1200-01F

Manufacturer:

IXYS

File Size:

509.40 KB

Description:

N-channel enhancement mode mosfet.

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