VMO1200-01F - N-Channel Enhancement Mode MOSFET
PolarHT™ Module N-Channel Enhancement Mode D G KS S VMO 1200-01F VDSS = 100 V ID25 = 1220 A RDS(on) = 1.25 mΩ max.
KS G SD MOSFET Symbol VDSS VGS ID25 ID80 IF25 IF80 Conditions TVJ = 25°C to 150°C TC = 25°C TC = 80°C TC = 25°C (diode) TC = 80°C (diode) Maximum Ratings 100 V ± 20 V 1220 A 970 A 1220 A 970 A Symbol RDSon VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erec td(on) tr td(off) tf Eon Eoff Erec RthJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless
VMO1200-01F Features
* PolarHT™ MOSFET technology - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode
* package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals
