VMO550-01F Datasheet - IXYS

VMO550-01F N-Channel MOSFET

HiPerFETTM MOSFET Module VMO 550-01F VDSS = 100 V ID25 = 590 A RDS(on) = 2.1 mW N-Channel Enhancement Mode Preliminary Data D G KS S E 72873 S D G KS Symbol V DSS VDGR VGS VGSM ID25 I D80 I DM P D TJ T JM T stg V ISOL Md Weight Symbol VDSS VGS(th) I GSS I DSS RDS(on) Test Conditions Maximum Ratings T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 10 kW Continuous Transient 100 V 100 V ±20 V ±30 V TS = 25°C T S = 80°C T S = 25°C T C = 25°C TS = 25°C 590 A 440 A p.

VMO550-01F Features

* q International standard package q Direct Copper Bonded Al O ceramic 23 base plate q Isolation voltage 3600 V~ q Low R HDMOSTM process DS(on) q Low package inductance for high speed switching q Kelvin Source contact for easy drive Applications q AC motor speed control for electric vehicles q DC serv

VMO550-01F Datasheet (45.24 KB)