50N60A - IGBT
(IXYS)
HiPerFASTTM IGBT
Surface Mountable
IXGH50N60A IXGH50N60AS
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.7 V
t
= 275 ns
fi
Symbol
Test Conditions
Max.
50N60AS - IGBT
(IXYS)
HiPerFASTTM IGBT
Surface Mountable
IXGH50N60A IXGH50N60AS
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.7 V
t
= 275 ns
fi
Symbol
Test Conditions
Max.
50N60T - IKW50N60T
(Infineon)
TrenchStop® Series
IKW50N60T q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contro.
50N65DM2 - N-Channel MOSFET
(STMicroelectronics)
STW50N65DM2AG
Datasheet
Automotive-grade N-channel 650 V, 70 mΩ typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package
Features
Order code STW50N65DM.
50N65DM6 - N-Channel MOSFET
(STMicroelectronics)
STP50N65DM6
Datasheet
N-channel 650 V, 74 mΩ typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package
TAB
TO-220
1 23
D(2, TAB)
G(1)
S(3)
AM0147.
50N02-09 - SUB50N02-09
(Vishay Siliconix)
SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V 0.017 @ VGS = 4..