50N60 Datasheet (IXYS)

50N60, IXRH50N60

Advanced Technical Information IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 ns TO-247 AD G C E C G C (TAB) C = Collector, TAB = Collector E G = Gate, E = Emitter, IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXRH 50N80 IXRH 50N60 Maximum Ratings ±800 ±600 ± 20 60 40 80 500 300 V V

50N60 Features

* q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperature coefficient of saturation voltage - optimum cu