Part number:
50N65DM2
Manufacturer:
File Size:
270.65 KB
Description:
N-channel mosfet.
50N65DM2 Datasheet (270.65 KB)
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
STMicroelectronics | STW50N65DM2AG | MOSFET N-CH 650V 28A TO247 | DigiKey | 594 | 30 units |
$3.33
|
🛒 Buy Now |
50N65DM2 Datasheet (270.65 KB)
50N65DM2
270.65 KB
N-channel mosfet.
* Order code STW50N65DM2AG VDS 650 V RDS(on) max. 87 mΩ ID 38 A 3 2 1 TO-247 D(2, TAB)
* AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on-resistance
* 100% avalanche tested
* Extremely high dv/
📁 Related Datasheet
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STP50N65DM6
Datasheet
N-channel 650 V, 74 mΩ typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package
TAB
TO-220
1 23
D(2, TAB)
G(1)
S(3)
AM0147.
50N60 - IXRH50N60
(IXYS)
Advanced Technical Information
IGBT with Reverse Blocking capability
IXRH 50N80 IXRH 50N60
VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 n.
50N60A - IGBT
(IXYS)
HiPerFASTTM IGBT
Surface Mountable
IXGH50N60A IXGH50N60AS
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.7 V
t
= 275 ns
fi
Symbol
Test Conditions
Max.
50N60AS - IGBT
(IXYS)
HiPerFASTTM IGBT
Surface Mountable
IXGH50N60A IXGH50N60AS
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.7 V
t
= 275 ns
fi
Symbol
Test Conditions
Max.
50N60T - IKW50N60T
(Infineon)
TrenchStop® Series
IKW50N60T q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contro.
50N02-09 - SUB50N02-09
(Vishay Siliconix)
SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V 0.017 @ VGS = 4..
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