50N65DM2
270.65kb
N-channel mosfet. This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr
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📁 Related Datasheet
50N65DM6 - N-Channel MOSFET
(STMicroelectronics)
STP50N65DM6
Datasheet
N-channel 650 V, 74 mΩ typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package
TAB
TO-220
1 23
D(2, TAB)
G(1)
S(3)
AM0147.
50N60 - IXRH50N60
(IXYS)
Advanced Technical Information
IGBT with Reverse Blocking capability
IXRH 50N80 IXRH 50N60
VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 n.
50N60A - IGBT
(IXYS)
HiPerFASTTM IGBT
Surface Mountable
IXGH50N60A IXGH50N60AS
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.7 V
t
= 275 ns
fi
Symbol
Test Conditions
Max.
50N60AS - IGBT
(IXYS)
HiPerFASTTM IGBT
Surface Mountable
IXGH50N60A IXGH50N60AS
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.7 V
t
= 275 ns
fi
Symbol
Test Conditions
Max.
50N60T - IKW50N60T
(Infineon)
TrenchStop® Series
IKW50N60T q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contro.
50N02-09 - SUB50N02-09
(Vishay Siliconix)
SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V 0.017 @ VGS = 4..
50N024 - SUD50N024
(Vishay Siliconix)
..
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
FEATURES
ID (A)d
80 6.
50N02409PU54A - SU50N02409PU54A
(Vishay Intertechnology)
.. ..
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
F.
50N025-05P - SUD50N025-05P
(Vishay Siliconix)
New Product
SUD50N025-05P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
25 0.0052 @ VGS = 10 V 0.0076 @ VGS =.
50N03 - Power Transistor
(Tuofeng)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N03
Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC c.