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CPC5602C

N-Channel FET

CPC5602C Features

* 350V Drain-to-Source Voltage

* Depletion Mode Device Offers Low RDS(on) at Cold Temperatures

* Low On-resistance: 8 (Typical) @ 25°C

* Low VGS(off) Voltage: -2.0V to -3.6V

* High Input Impedance

* Low Input and Output Leakage

* Small Package

CPC5602C General Description

The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The.

CPC5602C Datasheet (110.69 KB)

Preview of CPC5602C PDF

Datasheet Details

Part number:

CPC5602C

Manufacturer:

IXYS

File Size:

110.69 KB

Description:

N-channel fet.

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TAGS

CPC5602C N-Channel FET IXYS

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