* / Advantages:
* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
* Thin wafer technology combined wi
IXA27IF1200HJ Datasheet (125.26 KB)
IXA27IF1200HJ
IXYS
125.26 KB
Xpt igbt.
XPT IGBT Copack Part number IXA27IF1200HJ IXA27IF1200HJ VCES I C25 VCE(sat) = = = 1200 V 43 A 1.8 V (G) 1 2 (C) 3 (E) Backside: isolated Featu.
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