IXGA15N120B2 Datasheet - IXYS

IXGA15N120B2 IGBT

HiPerFASTTM IGBT IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE(sat) tfi(typ) =1200 V = 30 A = 3.5 V = 137 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C T C = 25°C, 1 ms V GE = 15 V, T VJ = 125°C, R G = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg Maximum lead temperature for s.

IXGA15N120B2 Features

* International standard packages JEDEC TO-220AB and TO-263AA

* Low switching losses

* MOS Gate turn-on - drive simplicity Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV CES VGE(th) I C = 250 µA, V GE = 0 V IC = 250 µA, VCE = VGE ICES VCE = V

IXGA15N120B2-IXYS.pdf