Datasheet Details
- Part number
- IXGA150N33TC
- Manufacturer
- IXYS
- File Size
- 194.53 KB
- Datasheet
- IXGA150N33TC-IXYS.pdf
- Description
- IGBT
IXGA150N33TC Description
Trench Gate High Speed IGBT For PDP Applications IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 VCES = ICP = VCE(sat) ≤ 330V 400A 1.8V Symbol VCES VG.
IXGA150N33TC Features
* International standard packages
* Low VCE(sat)
- for minimum on-state conduction losses
IXGA150N33TC Applications
* IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1
VCES =
ICP
=
VCE(sat) ≤
330V 400A 1.8V
Symbol
VCES
VGEM
IC25 ICP IDP IC(RMS) PC
TJ TJM Tstg
TL TSOLD Md
Weight
Test Conditions TC = 25°C to 150°C Transient
TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp < 10 μs TJ ≤ 150°C, tp < 10 μs Lead current limi
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