IXGA150N33TC IGBT

IXYS

Description

Trench Gate High Speed IGBT For PDP Applications IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 VCES = ICP = VCE(sat) ≤ 330V 400A 1.8V Symbol VCES VG.

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Datasheet Specifications

Part number: IXGA150N33TC
Manufacturer: IXYS
File Size: 194.53 KB
Datasheet: IXGA150N33TC-IXYS.pdf
Description: IGBT

Features

* International standard packages
* Low VCE(sat) - for minimum on-state conduction losses

Applications

* IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 VCES = ICP = VCE(sat) ≤ 330V 400A 1.8V Symbol VCES VGEM IC25 ICP IDP IC(RMS) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C Transient TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp < 10 μs TJ ≤ 150°C, tp < 10 μs Lead current limi

IXGA150N33TC Distributors

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IXGA150N33TC IGBT IXYS

IXYS IXGA150N33TC-like datasheet