* International standard package Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Applications Capacitor discharge Anode triggering of thyristors DC choppers Switched-mode and resonant-mode power supplies. © 2000 IX
IXGP2N100 Datasheet (83.71 KB)
IXGP2N100
IXYS
83.71 KB
High voltage igbt.
High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V IC90 2.0 A 2.0 A VCE(SAT) 2.7 V 3.5 V Symbol VCES VCGR Test Conditions TJ = 25°C to 1.
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