IXGP2N100 Datasheet (IXYS) - High Voltage IGBT

IXGP2N100, High Voltage IGBT

High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V IC90 2.0 A 2.0 A VCE(SAT) 2.7 V 3.5 V Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM IC25 IC90 ICM SSOA (RBSOA) Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 150W Clamped inductive load PC TJ TJM TSTG Weight TC = 25°C Max.

Lead Temperature for Soldering (1.6mm from case for 10s) Maximum Ratings 1000 V 1000 V ±20 V ±30 V 4 2 8 ICM = 6 @

IXGP2N100 Features

* International standard package Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Applications Capacitor discharge Anode triggering of thyristors DC choppers Switched-mode and resonant-mode power supplies. © 2000 IX