IXGP2N100A, IXGP2N100 Datasheet - IXYS

IXGP2N100A High Voltage IGBT

High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V IC90 2.0 A 2.0 A VCE(SAT) 2.7 V 3.5 V Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM IC25 IC90 ICM SSOA (RBSOA) Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 150W Clamped inductive load PC TJ TJM TSTG Weight TC = 25°C Max. Lead Temperature for Soldering (1.6mm from case for 10s) Maximum Ratings 1000 V 1000 V ±20 V ±30 V 4 2 8 ICM = 6 @.

IXGP2N100A Features

* International standard package Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Applications Capacitor discharge Anode triggering of thyristors DC choppers Switched-mode and resonant-mode power supplies. © 2000 IX

IXGP2N100-IXYS.pdf

IXGP2N100A Datasheet Preview — This datasheet PDF includes multiple part numbers: IXGP2N100A, IXGP2N100. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXGP2N100A, IXGP2N100

Manufacturer:

IXYS

File Size:

83.71 KB

Description:

High voltage igbt.

Note:

This datasheet PDF includes multiple part numbers: IXGP2N100A, IXGP2N100.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IXGP2N100 High Voltage IGBT (IXYS)

IXGP20N100 IGBT (IXYS Corporation)

IXGP20N120 IGBT (IXYS Corporation)

IXGP20N120A3 GenX3 1200V IGBTs (IXYS Corporation)

IXGP20N120B High Voltage IGBT (IXYS)

IXGP20N120B3 GenX3 1200V IGBT (IXYS Corporation)

IXGP20N120BD1 High Voltage IGBT (IXYS)

IXGP20N60B IGBT (IXYS Corporation)

TAGS

IXGP2N100A IXGP2N100 High Voltage IGBT IXYS

IXGP2N100A Distributor