IXGP20N120BD1 Datasheet - IXYS

IXGP20N120BD1 High Voltage IGBT

High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 Preliminary Data Sheet VCES IC25 VCE(sat) tfi(typ) = 1200 V = 40 A = 3.4 V = 160 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg Md Mounting torque (M3.5 screw) Maximum lead temperature for soldering 1.6 mm (0.062 in.) f.

IXGP20N120BD1 Features

* z International standard package z IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages z Saves space (two devices in one package) z Easy to mo

IXGP20N120BD1 Datasheet (576.54 KB)