IXGP7N60CD1 Datasheet (IXYS)

IXGP7N60CD1, IGBT

HiPerFASTTM IGBT with Diode IXGA 7N60CD1 IXGP 7N60CD1 LightspeedTM Series Preliminary Data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, (TO-220) TO-220 TO-263 M3 M3.5 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 300 µH TC = 25°C

IXGP7N60CD1 Features

* G = Gate, E = Emitter, C = Collector, TAB = Collector

* International standard packages 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g JEDEC TO-263 surface mountable and JEDEC TO-220 AB

* High frequency IGBT

* High current handling capability

* HiPerFASTTM HDMOSTM process