IXTP230N04T4, IXTA230N04T4 Datasheet - IXYS

IXTP230N04T4 - Power MOSFET

Advance Technical Information TrenchT4TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA230N04T4 IXTP230N04T4 VDSS = ID25 =  RDS(on) 40V 230A 2.9m TO-263 AA (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) fr.

IXTP230N04T4 Features

* International Standard Packages

* 175°C Operating Temperature

* High Current Handling Capability

* Avalanche Rated

* Low RDS(on) Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Synchronous Buck Converters

* High Curren

IXTA230N04T4-IXYS.pdf