IXTP230N075T2 Datasheet - IXYS

IXTP230N075T2 Power MOSFET

Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA230N075T2 IXTP230N075T2 VDSS = ID25 = RDS(on) ≤ 75V 230A 4.2mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting.

IXTP230N075T2 Features

* z International standard packages z 175°C Operating Temperature z High current handling capability z Low RDS(on) Advantages z Easy to mount z Space savings z High power density Applications z Electrical Motor Drive z High current switching DC to DC converter © 2008 IXYS CORPORATION, All rights rese

IXTP230N075T2 Datasheet (196.23 KB)