IXTP24P085T, IXTA24P085T Datasheet - IXYS

IXTP24P085T Power MOSFET

TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA24P085T IXTP24P085T VDSS = ID25 = ≤RDS(on) - 85V - 24A 65mΩ TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-220 TO-263 Maximum .

IXTP24P085T Features

* z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators z B

IXTA24P085T-IXYS.pdf