Description
TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ .
Features
* International Standard Packages
* Avalanche Rated
* Extended FBSOA
* Fast Intrinsic Diode
* Low RDS(ON) and QG
Advantages
* Easy to Mount
* Space Savings
Applications
* High-Side Switching
* Push Pull Amplifiers
* DC Choppers
* Automatic Test Equipment
* Current Regulators
* Battery Charger Applications
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DS100291B(8/17)
IXTY26P10T
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specifie