Description
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA28P065T IXTP28P065T VDSS = ID25 = ≤ RDS(on) - 65V - 28A 45mΩ TO-263 AA (IXT.
Features
* z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS
VGS = ± 15V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
Applications
* z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators z Battery Charger Applications
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DS99968B(01/13)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = -10V, ID = 0.5