IXTV30N50PS Datasheet - IXYS

IXTV30N50PS PolarHV Power MOSFET

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS VDSS ID25 RDS(on) = 500 V = 30 A = 200 mΩ www.DataSheet4U.com TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A.

IXTV30N50PS Features

* z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect DS99415(07/05) © 2005 IXYS All rights reserved IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS Symbol Test Conditions Characteristic Values (TJ = 25°C,

IXTV30N50PS Datasheet (327.56 KB)