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IXTV30N50PS, IXTH30N50P Datasheet - IXYS

IXTV30N50PS PolarHV Power MOSFET

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS VDSS ID25 RDS(on) = 500 V = 30 A = 200 mΩ www.DataSheet4U.com TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A.

IXTV30N50PS Features

* z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect DS99415(07/05) © 2005 IXYS All rights reserved IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS Symbol Test Conditions Characteristic Values (TJ = 25°C,

IXTH30N50P_IXYS.pdf

This datasheet PDF includes multiple part numbers: IXTV30N50PS, IXTH30N50P. Please refer to the document for exact specifications by model.
IXTV30N50PS Datasheet Preview Page 2 IXTV30N50PS Datasheet Preview Page 3

Datasheet Details

Part number:

IXTV30N50PS, IXTH30N50P

Manufacturer:

IXYS

File Size:

327.56 KB

Description:

Polarhv power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTV30N50PS, IXTH30N50P.
Please refer to the document for exact specifications by model.

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IXTV30N50PS IXTH30N50P PolarHV Power MOSFET IXYS

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