IXTX5N250 Datasheet - IXYS

IXTX5N250 High Voltage Power MOSFETs

Advance Technical Information High Voltage Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA IXTK5N250 IXTX5N250 VDSS ID25 RDS(on) = 2500V = 5A < 8.8Ω TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic.

IXTX5N250 Features

* z Avalanche Rated z Fast Intrinsic Diode z Guaranteed FBSOA at 75°C z Low Package Inductance Advantages z Easy to Mount z Space Savings Applications z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2010 IXYS CORPORATION, All Rights Reserved DS100280(08/10) Symbol Test Condi

IXTX5N250 Datasheet (120.14 KB)