* z Avalanche Rated z Fast Intrinsic Diode z Guaranteed FBSOA at 75°C z Low Package Inductance Advantages z Easy to Mount z Space Savings Applications z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2010 IXYS CORPORATION, All Rights Reserved DS100280(08/10) Symbol Test Condi
IXTX5N250 Datasheet (120.14 KB)
IXTX5N250
IXYS
120.14 KB
High voltage power mosfets.
Advance Technical Information High Voltage Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA IXTK5N250 IXTX.
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