IXTX170P10P Datasheet - IXYS

IXTX170P10P Power MOSFET

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTK170P10P IXTX170P10P VDSS = ID25 = ≤RDS(on) -100V -170A 12mΩ TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from.

IXTX170P10P Features

* z International Standard Packages z Rugged PolarPTM Process z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switches z Push Pull Amplifiers z DC Choppers z Au

IXTX170P10P Datasheet (121.99 KB)