Description
Advance Technical Information TrenchT2TM GigaMOS TM Power MOSFET IXTK600N04T2 IXTX600N04T2 VDSS ID25 = = RDS(on) ≤ 40V 600A 1.5mΩ N-Channel Enh.
Features
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International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on)
Advantages
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Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ± 20V, VDS = 0
Applications
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10 µA 1 mA 1.5 mΩ
DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications
VGS = 10V, ID = 100A, Notes 1 & 2
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DS100209(11/09)
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IXTK600N04T2 IXTX600N04T2
Symbol Test Conditions (TJ =