* z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ± 20V, VDS = 0
IXTX600N04T2 Datasheet (309.19 KB)
IXTX600N04T2
IXYS
309.19 KB
Power mosfet.
Advance Technical Information
TrenchT2TM GigaMOS TM Power MOSFET
IXTK600N04T2 IXTX600N04T2
VDSS ID25
= =
RDS(on) ≤
40V 600A 1.5mΩ
N-Channel Enh.
📁 Related Datasheet
IXTX60N50L2 N-Channel MOSFET (INCHANGE)
IXTX60N50L2 Power MOSFET (IXYS)
IXTX102N65X2 Power MOSFET (IXYS)
IXTX110N20L2 Power MOSFET (IXYS)
IXTX110N20L2 N-Channel MOSFET (INCHANGE)
IXTX120N65X2 Power MOSFET (IXYS)
IXTX170P10P Power MOSFET (IXYS)
IXTX17N120L Power MOSFET (IXYS)
IXTX200N10L2 N-Channel MOSFET (INCHANGE)
IXTX200N10L2 Power MOSFET (IXYS)
